Bio

Bio


Dr. Ertosun graduated from Bilkent Üniversitesi (Bilkent University) with a B.S. degree in Electrical & Electronics Engineering in 2004. During his undergraduate studies at Bilkent, he conducted research with Prof. Haldun Ozaktas in the fields of optics and signal processing. He received an M.S. degree in Electrical Engineering from Stanford University in 2006, where his research focused on optoelectronic & semiconductor devices, and carbon nanotubes. He received a second M.S. degree in Financial Mathematics from Stanford in 2009. In the field of quantitative finance, his interests include credit risk & modeling, financial instrument pricing, and computational modeling with applications to finance, including simulation of stochastic processes and asset pricing models.

In 2010, he earned his Ph.D. degree from Electrical Engineering department of Stanford University, where he was a research assistant in the research lab of Prof. Krishna Saraswat. His Ph.D. research was focused on novel single-transistor dynamic random-access memory (DRAM) technologies.

Between 2010 and 2012, he worked as a Senior Member of Technical Staff -- Research Engineer in the industry, and conducted research in the field of novel & emerging memory technologies, where he was focused on modeling, optimization and engineering of emerging memories such as resistive switch memories.

In 2012, he joined the Molecular Imaging Instrumentation Laboratory at Stanford School of Medicine as a postdoctoral scholar, where he worked on development, modeling and simulation of novel medical imaging technologies, with a special interest in photon-counting CT technology with aspects ranging from semiconductor-level novel detector studies to quantitative imaging and biomedical informatics studies.

In 2014, Dr. Ertosun has been selected to be an SCIT fellow. The Stanford Cancer Imaging Training (SCIT) Program, supported by the National Cancer Institute, aims to train the next generation of researchers in the development and clinical application of advanced techniques for cancer imaging.

In 2015, he joined Integrative Biomedical Imaging Informatics at Stanford (IBIIS: http://ibiis.stanford.edu) to work on applications of artificial intelligence and machine learning for detection and diagnosis of cancer.

Professional Education


  • Doctor of Philosophy, Stanford University, EE-PHD (2010)
  • Master of Science, Stanford University, FMATH-MS (2009)
  • Master of Science, Stanford University, EE-MS (2006)
  • Bachelor of Science, Bilkent University, Electrical & Electronics Eng. (2004)

Stanford Advisors


Research & Scholarship

Current Research and Scholarly Interests


His current research interests include development, modeling and simulation of novel medical imaging technologies.

Publications

Journal Articles


  • Novel Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM) Utilizing Electrons IEEE ELECTRON DEVICE LETTERS Ertosun, M. G., Lim, K., Park, C., Oh, J., Kirsch, P., Saraswat, K. C. 2010; 31 (5): 405-407
  • Investigation of Capacitorless Double-Gate Single-Transistor DRAM: With and Without Quantum Well IEEE TRANSACTIONS ON ELECTRON DEVICES Ertosun, M. G., Saraswat, K. C. 2010; 57 (3): 608-613
  • Novel Capacitorless Single Transistor Charge Trap DRAM (1T CT DRAM) Utilizing Electrons IEEE Electron Device Letters M. G. Ertosun, K. Lim, C. Park, J. Oh, P. Kirsch, K.C. Saraswat 2010; 31 (5)
  • Investigation of Capacitorless Double-Gate Single-Transistor DRAM: With and Without Quantum Well IEEE Transactions on Electron Devices M. G. Ertosun, K. C. Saraswat 2010; 57 (3): 608-613
  • ?Characteristics Of The Capacitorless Double Gate Quantum Well Single Transistor DRAM IEEE International Conference on Simulation of Semiconductor Process and Devices 2009, September 2009 M. G. Ertosun, K. C. Saraswat 2009
  • Characteristics of the Capacitorless Double Gate Quantum Well Single Transistor DRAM 2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES Ertosun, M. G., Saraswat, K. C. 2009: 35-38
  • Novel Single Transistor DRAM Technologies (Invited Talk) Emerging Technologies in Solid State Devices Workshop, Baltimore, December 2009 (Invited)Emerging Technologies in Solid State Devices Workshop, Baltimore, December 2009 (Invited) M. G. Ertosun 2009
  • Ge MOSFETs and Single Transistor DRAM (Invited Talk) 6th International Symposium on Advanced Gate Stack Technology, August 2009 (Invited) K. Saraswat, M. G. Ertosun, D. Kim, T. Krishnamohan, P. McIntyre, Y. Nishi, A. Okyay, J. Park, H. Yu; 2009
  • Novel Memory Devices: Capacitorless Quantum Well 1T DRAM (Invited Talk) Semiconductor Research Corporation (SRC)/National Science Foundation (NSF)/The Singapore Agency for Science, Technology and Research(A*STAR) Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures, Singapore, October 2009 M. G. Ertosun 2009
  • A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM IEEE ELECTRON DEVICE LETTERS Ertosun, M. G., Kapur, P., Saraswat, K. C. 2008; 29 (12): 1405-1407
  • Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures APPLIED PHYSICS LETTERS Behnam, A., Johnson, J. L., Choi, Y., Ertosun, M. G., Okyay, A. K., Kapur, P., Saraswat, K. C., Ural, A. 2008; 92 (24)

    View details for DOI 10.1063/1.2945644

    View details for Web of Science ID 000256934900090

  • A nanoscale vertical double-gate single-transistor capacitorless DRAM IEEE ELECTRON DEVICE LETTERS Ertosun, M. G., Cho, H., Kapur, P., Saraswat, K. C. 2008; 29 (6): 615-617
  • Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts JOURNAL OF APPLIED PHYSICS Behnam, A., Johnson, J., Choi, Y., Noriega, L., Ertosun, M. G., Wu, Z., Rinzler, A. G., Kapur, P., Saraswat, K. C., Ural, A. 2008; 103 (11)

    View details for DOI 10.1063/1.2938037

    View details for Web of Science ID 000256706200101

  • Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film- Silicon Schottky Contacts SPIE Photonics West Conference, January 2008. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, Z. Wu, A.G. Rinzler, P. Kapur, K. C. Saraswat, A. Ural 2008
  • A Nanoscale Vertical Double-Gate Single-Transistor Capacitorless DRAM IEEE Electron Device Letters M. G. Ertosun, H. Cho; P. Kapur; K. C. Saraswat; 2008; 29 (6)
  • Metal-Semiconductor-Metal (MSM) Photodetectors with Single-walled Carbon Nanotube Film Schottky Electrodes on GaAs 2008 American Physical Society (APS) March Meeting, New Orleans, LA, March 2008 A Behnam, J. Johnson , Y. Choi , L. Noriega , M. G. Ertosun , Z. Wu , A. Rinzler , P. Kapur , K. C. Saraswat , A.Ural 2008
  • Metal-Semiconductor-Metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts Journal of Applied Physics A. Behnam, J. L. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, A. Ural 2008; 103 (111)
  • A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM:1T-QW DRAM IEEE Electron Device Letters M. G. Ertosun, P. Kapur; K. C. Saraswat 2008; 29 (12)
  • Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal- semiconductor-metal structures Applied Physics Letters A. Behnam, J. L. Johnson, Y.Choi, M. Gnhan Ertosun, A. K. Okyay, P. Kapur, K. C. Saraswat, A. Ural 2008; 92 (24)
  • Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts MRS (Materials Research Society) Fall Meeting J. L. Johnson, J. L. Johnson, A. Behnam, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A.G. Rinzler, P.Kapur, K. C. Saraswat, A. Ural 2007
  • Complex signal recovery from multiple fractional Fourier-transform intensities APPLIED OPTICS Ertosun, M. G., Atli, H., Ozaktas, H. M., Barshan, B. 2005; 44 (23): 4902-4908

    Abstract

    The problem of recovering a complex signal from the magnitudes of any number of its fractional Fourier transforms at any set of fractional orders is addressed. This problem corresponds to the problem of phase retrieval from the transverse intensity profiles of an optical field at arbitrary locations in an optical system involving arbitrary concatenations of lenses and sections of free space. The dependence of the results on the number of orders, their spread, and the noise is investigated. Generally, increasing the number of orders improves the results, but with diminishing return beyond a certain point. Selecting the measurement planes such that their fractional orders are well separated or spread as much as possible also leads to better results.

    View details for Web of Science ID 000231042700012

    View details for PubMedID 16114527

  • Complex signal recovery from two fractional Fourier transform intensities: order and noise dependence OPTICS COMMUNICATIONS Ertosun, M. G., Ath, H., Ozaktas, H. M., Barshan, B. 2005; 244 (1-6): 61-70
  • Complex signal recovery from two fractional Fourier transform intensities: order and noise dependence Optics Communications M. G. Ertosun, H. Atli, H. M. Ozaktas, B. Barshan 2005; 244 (1-6): 61-70
  • Complex signal recovery from fractional Fourier transform intensities, IEEE, New Jersey EE 12th Signal Processing and Communications Applications Conference M. G. Ertosun, H. Atli, H. M. Ozaktas, B. Barshan 2004: 308?311

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